石原 良一

過去の在籍者

Ryoichi Ishihara石原 良一

特任准教授

電子デバイスナノエレクトロニクス

研究プロジェクト

  • エキシマーレーザー結晶化法による位置制御シリコンアイランドの形成（2007）

  • 種結晶基板なしで位置と方位を制御した単一グレインTFTの開発　(2010)

1996 - 2003

デルフト工科大学　ポスドク
2003 - 2007

デルフト工科大学　助教
2007 -

デルフト工科大学　准教授
2016 -

東京工業大学科学技術創成研究院特任准教授
2003

Outstanding poster award, IDW (International Display Workshop)
2005

Best Paper Award, The International Workshop on Active-Matrix Flat-Panel Displays (AMFPD)
2007

Best Paper Award, The International Workshop on Active-Matrix Flat-Panel Displays (AMFPD)
2009

Best Poster Award, E-MRS 2009 Spring Meeting
2014

Best Paper Award, ITC (International Thin-Film Transistor Conference)
2014

J. Zhang, M. Van Der Zwan, R. Ishihara, “Single-grain Si TFTs fabricated from sputtered si on a polyimide substrate”, IEEE/OSA Journal of Display Technology, 10 (11), (2014) art. no. 6762833, pp. 945-949
Ryoichi Ishihara, Jin Zhang, Miki Trifunovic, Jaber Derakhshandeh, Negin Golshani, Daniel M. R. Tajari Mofrad, Tao Chen, Kees Beenakker, Tatsuya Shimoda: “Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics” IEICE Transactions 97-C(4): 227-237 (2014)
S. Vollebregt, F.D. Tichelaar, H. Schellevis, C.I.M. Beenakker, R. Ishihara, ” Carbon nanotube vertical interconnects fabricated at temperatures as low as 350°C”, Carbon, 71, pp. 249-256 (2014)
P. Sun, E. Charbon and R. Ishihara, “A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination”, Selected Topics in Quantum Electronics, IEEE Journal of , vol.20, no.6, pp.1,8, Nov.-Dec. 2014
2015

Fiorentino, G., Vollebregt, S., Tichelaar, F.D., Ishihara, R., Sarro, P.M, “Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based super-capacitors performances”, (2015) Nanotechnology, 26 (6), art. no. 064002,
M. Trifunovic, T. Shimoda and R. Ishihara, “Solution-processed polycrystalline silicon on paper”, Appl. Phys. Lett. 106, 163502 (2015)