シリコン物理形成量子ドットにおいて単正孔輸送を高温(25 K)で実現(Editor’s pick)

シリコン物理形成量子ドットにおいて単正孔輸送を高温(25 K)で実現(Editor’s pick)

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量子コンピューティング研究ユニット 小寺哲夫准教授と石原良一特任准教授の共著論文

“Temperature dependence of hole transport properties through physically defined silicon quantum dots”

が、Appl. Phys. Lett.に掲載されました。(Editor’s pickに選ばれました。)(DOI: 10.1063/5.0010981

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<Abstract>

For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on silicon-on-insulator for strong confinement of holes and investigate the temperature dependence of Coulomb oscillations and Coulomb diamonds. The physically defined Si QDs show clear Coulomb diamonds at temperatures up to 25 K, much higher than for gate defined QDs. To verify the temperature dependence of Coulomb diamonds, we carry out simulations and find good agreement with the experiment. The results suggest a possibility for realizing quantum computing chips with qubits integrated with CMOS electronics operating at higher temperature in the future.