シリコン量子ビット集積に適したMOS構造において少数電子3重量子ドットを実現(Editor’s Pick)

シリコン量子ビット集積に適したMOS構造において少数電子3重量子ドットを実現(Editor’s Pick)

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量子コンピューティング研究ユニット 小寺哲夫准教授と石原良一特任准教授の共著論文

“Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures”

が、Appl. Phys. Lett.に掲載されました。(Editor’s pickに選ばれました。)(DOI: 10.1063/5.0010906

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<Abstract>

Physically defined silicon triple quantum dots (TQDs) are fabricated on a silicon-on-insulator substrate by dry-etching. The fabrication method enables us to realize a simple structure that does not require gates to create quantum dot confinement potentials and is highly advantageous for integration. We observe the few-electron regime and resonant tunneling points in the TQDs by applying voltages to two plunger gates at a temperature of 4.2 K. Moreover, we reproduce the measured charge stability diagram by simulation with an equivalent-circuit model composed of capacitors and resistors. The equivalent-circuit simulation makes it clear that we realize three QDs in series within the nanowire, as planned. This circuit model also elucidates the mechanism of resonant tunneling and identifies a quadruple point of TQDs.