The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoOcocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity of b-Si over the entire visible and near-IR ( m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO2.
Black-Si shows potential for use as photo-anode for oxidation of water/bacteria/virus
物質理工学院 Saulius Juodkazis特任教授の共著論文
“Black-Si as a Photoelectrode”
が、Nanomaterials に掲載されました。（DOI: https://doi.org/10.3390/nano10050873）