Kaustav Banerjee


Kaustav Banerjee

Specially Appointed Professor

Electron DevicesNanoelectronics

Research Projects

2002 - 2004

Assistant Professor, Department of Electrical and Computer Engineering, UCSB

2004 - 2007

Associate Professor, Department of Electrical and Computer Engineering, UCSB

2007 -

Professor, Department of Electrical and Computer Engineering, UCSB


Specially Appointed Professor, Institute of
Innovative Research, Tokyo Institute of Technology

2018 -

Specially Appointed Professor, School of
Engineering, Tokyo Institute of Technology


IBM Faculty Award
Distinguished Lecturer Award, IEEE Electron Devices Society


Friedrich Wilhelm Bessel Research Award, Humboldt Foundation, Germany


Fellow, Institute of Electrical and Electronics Engineers (IEEE)


Fellow, Japan Society for the Promotion of Science (JSPS)


Fellow, American Physical Society (APS)


IEEE Kiyo Tomiyasu Technical Field Award


Fellow, American Association for the Advancement of Science (AAAS)


W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee, “Role of metal contacts in designing high-performance monolayer n-Type WSe2 field-effect-transistors,” Nano Letters, 13 (5), 1983-1990, (2013).


D. Sarkar, W. Liu, X. Xie, A. Anselmo, S. Mitragotri and K. Banerjee, “MoS2 field-effect transistor for next-generation label-free biosensors,” ACS Nano, 8 (4), 3992-4003, (2014).
J. Kang, W. Liu and K. Banerjee, “High-performance MoS2 transistors with low-resistance molybdenum contacts,” Applied Physics Letters, 104 (9), 093106, (2014).
J. Kang, W. Liu, D. Sarkar, D. Jena and K. Banerjee, “Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors,” Phys. Review X, 4(3), 031005, (2014).


D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P.M. Ajayan and K. Banerjee, “A subthermionic tunnel field-effect transistor with an atomically thin channel,” Nature, 526, pp. 91-95, (2015).
W. Cao, J. Kang, D. Sarkar, W. Liu, and K. Banerjee, “2D semiconductor FETs – Projections and design for sub-10 nm VLSI,” IEEE Transactions on Electron Devices, 62 (11), 3459-3469, (2015).
A. Allain, J. Kang, K. Banerjee and A. Kis, “Electrical contacts to two-dimensional semiconductors,” Nature Materials, Vol. 14, pp. 1195–1205, (2015).


J. Jiang, J. Kang, W. Cao, X. Xie, H. Zhang, J. H. Chu, W. Liu, and K. Banerjee, “Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects,” Nano Letters, Vol. 17, No. 3, pp. 1482-1488, 2017.


J. Kang, Y. Matsumoto, X. Li, J. Jiang, X. Xie, K. Kawamoto, M. Kenmoku, J-H. Chu, W. Liu, J. Mao, K. Ueno and K. Banerjee,” On-Chip Intercalated-Graphene Inductors for Next-Generation Radio Frequency Electronics,” Nature Electronics, Vol. 1, No. 1, pp. 46-51, 2018.