Mihai Adrian Ionescu

1998-2005 Assistant Professor, School of Engineering, EPFL
2005-2012 Associate Professor, School of Engineering, EPFL
2012- Professor, School of Engineering, EPFL
2016 Professor (Specially Appointed), Institute of Innovative Research, Tokyo Institute of Technology

Electron Devices, Nanoelectronics

Laboratory for Future Interdisciplinary Research of Science and Technology(IIR, Tokyo Tech)
Ecole polytechnique fédérale de Lausanne(Switzerland)


Research Hub Group:Materials and Devices international hub group

Research Highlights

  • Steep slope electronic devices: tunnel FETs and Negative Capacitance FETs.
  • Nano-Electro-Mechanical-Systems NEMS: logic, Radio Frequency and sensing applications
  • New ultra-low power sensor structures based on 1D and 2D materials

Selected Awards

  • 2015
    Outstanding Achievement Award, Swiss Academy of Technical Sciences
  • 2013
    IBM Faculty Award, Engineering
  • 2009
    Andre Blondel Medal of the Society of Ellectrical and Electronics Engineering (SEE)
  • 1994
    Annual Award of the Romanian Academy of Technical Sciences, Romania
  • 1994
    EMRS Young Scientist Award, Strasbourg, France
  • 1993
    Best Paper Award, IEEE SOI Conference, USA.

Selected Publications

  • K Boucart, A.M. Ionescu, Double-gate tunnel FET with high-κ gate dielectric, IEEE Transactions on Electron Devices, 54 (7), 1725-1733, 2007.
  • K Boucart, A.M. Ionescu, Length scaling of the double gate tunnel FET with a high-k gate dielectric, Solid-State Electronics, Vol. 51, 2007, pp. 1500-1507.
  • L. De Michielis, L Lattanzio, A.M. Ionescu, Understanding the superlinear onset of tunnel-FET output characteristic, IEEE Electron Device Letters, Vol. 33, 2012, pp. 1523-1525.
  • L. Lattanzio, L. De Michielis, A.M. Ionescu, Complementary germanium electron–hole bilayer tunnel
    FET for sub-0.5-V operation, IEEE Electron Device Letters, 33 (2), 167-169, 2012.
  • A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches, Nature, vol. 479 (7373), 2011, pp. 329-337.