Kaustav Banerjee

プロフィール
2002-2004 Assistant Professor, Department of Electrical and
                 Computer Engineering, UCSB   
2004-2007 Associate Professor, Department of Electrical and
                 Computer Engineering, UCSB   
2007-        Professor, Department of Electrical and Computer
                 Engineering, UCSB   
2016          Specially Appointed Professor, Institute of
                 Innovative Research, Tokyo Institute of Technology
2018-         Specially Appointed Professor, School of
                 Engineering, Tokyo Institute of Technology

専門分野
Electron Devices, Nanoelectronics

School of Engineering(Tokyo Tech)
University of California, Santa Barbara(U.S.A)

 http://nrl.ece.ucsb.edu/
Kaustav@ece.ucsb.edu

Research Hub Group:Materials and Devices international hub group

Research Highlights

Selected Awards

  • 2008
    IBM Faculty Award
  • 2008
    Distinguished Lecturer Award, IEEE Electron Devices Society
  • 2011
    Friedrich Wilhelm Bessel Research Award, Humboldt Foundation, Germany
  • 2012
    Fellow, Institute of Electrical and Electronics Engineers (IEEE)
  • 2013
    Fellow, Japan Society for the Promotion of Science (JSPS)
  • 2014
    Fellow, American Physical Society (APS)
  • 2015
    IEEE Kiyo Tomiyasu Technical Field Award
  • 2016
    Fellow, American Association for the Advancement of Science (AAAS)

Selected Publications

  • J. Kang, Y. Matsumoto, X. Li, J. Jiang, X. Xie, K. Kawamoto, M. Kenmoku, J-H. Chu, W. Liu, J. Mao, K. Ueno and K. Banerjee,” On-Chip Intercalated-Graphene Inductors for Next-Generation Radio Frequency Electronics,” Nature Electronics, Vol. 1, No. 1, pp. 46-51, 2018. 
  • J. Jiang, J. Kang, W. Cao, X. Xie, H. Zhang, J. H. Chu, W. Liu, and K. Banerjee, “Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects,” Nano Letters, Vol. 17, No. 3, pp. 1482-1488, 2017.
  • A. Allain, J. Kang, K. Banerjee and A. Kis, “Electrical contacts to two-dimensional semiconductors,” Nature Materials, Vol. 14, pp. 1195–1205, (2015).
  • W. Cao, J. Kang, D. Sarkar, W. Liu, and K. Banerjee, “2D semiconductor FETs – Projections and design for sub-10 nm VLSI,” IEEE Transactions on Electron Devices, 62 (11), 3459-3469, (2015).
  • D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P.M. Ajayan and K. Banerjee, “A subthermionic tunnel field-effect transistor with an atomically thin channel,” Nature, 526, pp. 91-95, (2015).
  • J. Kang, W. Liu, D. Sarkar, D. Jena and K. Banerjee, “Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors,” Phys. Review X, 4(3), 031005, (2014).
  • J. Kang, W. Liu and K. Banerjee, “High-performance MoS2 transistors with low-resistance molybdenum contacts,” Applied Physics Letters, 104 (9), 093106, (2014).
  • D. Sarkar, W. Liu, X. Xie, A. Anselmo, S. Mitragotri and K. Banerjee, “MoS2 field-effect transistor for next-generation label-free biosensors,” ACS Nano, 8 (4), 3992-4003, (2014).
  • W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee, “Role of metal contacts in designing high-performance monolayer n-Type WSe2 field-effect-transistors,” Nano Letters, 13 (5), 1983-1990, (2013).