Simon Deleonibus

Profile
1981-1986 Thomson Semiconductors
1986-1996 Device Research Expert, CEA-LETI
1996-1998 Project Leader, CEA-LETI
1998-2008 Director, CEA-LETI
2008- Chief Scientist, CEA-LETI
2016 Professor (Specially Appointed), Institute of Innovative Research, Tokyo Institute of Technology

Field of Specialization
Nanoscale silicon devices

Laboratory for Future Interdisciplinary Research of Science and Technology(IIR, Tokyo Tech)
CEA-LETI(France)

 simon.deleonibus.1992@ieee.org

Research Hub Group:Materials and Devices international hub group

Research Highlights

  • Inventor in 1984 of “contact plug“ principle universally used by the microelectronics industry worldwide;
  • World record of smallest transistor in 1999 (Lg=20nm)

Selected Awards

  • 2006 IEEE Fellow
  • 2004 Chevalier de l’Ordre National du Mérite
  • 2011 Chevalier de l’Ordre des Palmes Académiques
  • 2005 Lauréat Grand Prix de l’Académie des Technologies

Selected Publications

  • Deleonibus S. , “Ultra Thin Films and Multigate Devices Architectures for future CMOS Scaling”, (Invited review paper) Science in China – Series F: Information Sciences , 54 ,5 (2011) , 990-1003, SPRINGER ; Science China Press
  • M. Rabarot, J. Widiez, S. Saada, J-P. Mazellier, J-C. Roussin, J. Dechamp, P. Bergonzo, F.Andrieu, O. Faynot, S. Deleonibus, L. Clavelier. , “Silicon-on-Diamond layer integration by wafer bonding technology”, Diamond and Related Materials, vol. 19, issue 7-9, pp. 796-805,2009,DOI: 10.1016/j.diamond.2010.01.049
  • M. Vinet, T. Poiroux, C. Licitra, J. Widiez, J. Bhandari, B. Previtali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, and S. Deleonibus, “Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High-K Dielectrics, and Metallic Source/Drain”, IEEE Electron Device Letters, vol 30, n°7, pp 748-750, 2009
  • V. Barral, T. Poiroux, A. Bournel, J. Saint-Martin, D. Munteanu, J.L. Autran and S. Deleonibus, “Experimental investigation on the quasi-ballistic transport: Part I-Determination of a new backscattering coefficient extraction methodology” IEEE Trans. Electron Devices, 56, 408-419, 2009; Part II-Backscattering coefficient extraction and link with the mobility”, IEEE Trans. Electron Devices, 56, 420-430, 2009.
  • S. Poli, M. Pala, T. Poiroux, S. Deleonibus, and G. Baccarani, “Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs,” IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 2968–2976, Nov. 2008.