Raymond T. Tung

1982-2001 Distinguished Member of Technical Staff, Lucent Technologies, Bell Labs, Murray Hill, N.J.
2002- Professor, Dept. of Physics, Brooklyn College, CUNY

Field of Specialization
Schottky Barriers, Heterojunctions

Brooklyn College, CUNY(U.S.A)


Research Hub Group:Materials and Devices international hub group

Research Highlights

  • Demonstrated the control of growth orientation of heteroepitaxial metal-semiconductor systems.
  • Discovered a correlation of the Schottky barrier height with the atomic structure of epitaxial metal-semiconductor interfaces.
  • Elucidated transport mechanism at multilayered, epitaxial, hot electron devices (metal-based transistor).

Selected Awards

  • 1987
    Peter Mark Memorial Award, American Vacuum Society
  • 1988
    Distinguished Member Award, AT&T Bell Laboratories
  • 1992
    Fellow, American Physical Society

Selected Publications 

  • Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy, R. T. Tung and L. Kronik, Phys. Rev. B 94, 075310 (2016).
  • The physics and chemistry of the Schottky barrier height, R. T. Tung, Applied Physics Reviews 1(1), 011304 (2014).
  • Electrostatic Properties of Ideal and Non-ideal Polar Organic Monolayers: Implications for Electronic Devices, Natan, L. Kronik, H. Haick, and R. T. Tung, Advanced Materials 19, 4103 (2007)
  • Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance-voltage and conductance voltage measurements, S. Huang, S. Banerjee, R.T. Tung, and S. Oda, J. Appl. Phys. 93, 576-581 (2003).
  • Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement, S. Huang, S. Banerjee, R. T. Tung, and S. Oda, J. Appl. Phys. 94, 7261-7265 (2003).
  • Chemical bonding and Fermi level pinning at metal-semiconductor interfaces, R. T. Tung, Phys. Rev. Lett. 84, 6078 (2000).
  • Electron transport at metal-semiconductor interfaces: General theory, R. T. Tung, Phys. Rev. B 45, 13509 (1992).