1982-2001 Distinguished Member of Technical Staff, Lucent Technologies, Bell Labs, Murray Hill, N.J.
2002- Professor, Dept. of Physics, Brooklyn College, CUNY
Field of Specialization
Schottky Barriers, Heterojunctions
Brooklyn College, CUNY（U.S.A）
Research Hub Group：Materials and Devices international hub group
- Demonstrated the control of growth orientation of heteroepitaxial metal-semiconductor systems.
- Discovered a correlation of the Schottky barrier height with the atomic structure of epitaxial metal-semiconductor interfaces.
- Elucidated transport mechanism at multilayered, epitaxial, hot electron devices (metal-based transistor).
Peter Mark Memorial Award, American Vacuum Society
Distinguished Member Award, AT&T Bell Laboratories
Fellow, American Physical Society
- Band offset formation at semiconductor heterojunctions through density-based minimization of interface energy, R. T. Tung and L. Kronik, Phys. Rev. B 94, 075310 (2016).
- The physics and chemistry of the Schottky barrier height, R. T. Tung, Applied Physics Reviews 1(1), 011304 (2014).
- Electrostatic Properties of Ideal and Non-ideal Polar Organic Monolayers: Implications for Electronic Devices, Natan, L. Kronik, H. Haick, and R. T. Tung, Advanced Materials 19, 4103 (2007)
- Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance-voltage and conductance voltage measurements, S. Huang, S. Banerjee, R.T. Tung, and S. Oda, J. Appl. Phys. 93, 576-581 (2003).
- Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement, S. Huang, S. Banerjee, R. T. Tung, and S. Oda, J. Appl. Phys. 94, 7261-7265 (2003).
- Chemical bonding and Fermi level pinning at metal-semiconductor interfaces, R. T. Tung, Phys. Rev. Lett. 84, 6078 (2000).
- Electron transport at metal-semiconductor interfaces: General theory, R. T. Tung, Phys. Rev. B 45, 13509 (1992).