Kunji Chen

1963-1986 Instructor, Nanjing University
1986-1988 Associate Professor, Nanjing University
1988- Professsor, Department of Physics, Nanjing University
2016 Professor (Specially Appointed), Institute of Innovative Research, Tokyo Institute of Technology

Field of Specialization
Nanocrystalline Semiconductors, Nano-electronics and Nano-optoelectronics

Laboratory for Future Interdisciplinary Research of Science and Technology(IIR, Tokyo Tech)
Nanjing University(China)


Research Hub Group:Materials and Devices international hub group

Research Highlights

  • 1) nanocrystalline silicon-based hetero-junction, quantum well and superlattices; 2) Ordered controllable silicon quantum dots by constrained growth; 3) Light emission and amplify of nano-silicon based microcavity; 4) Single electron tunneling and charging effect in silicon quantum dot array. 5) Coulomb blocked effect and single electron transistors.

Selected Awards

  • 2003 State Science and Technology Awards,
  • 1988, 1995, 2002 Advanced Achievement Awards in Science and Technology of Jiangsu Province,
  • 1990 Distinction Award for Middle Age Scientist, Jiangsu province,

Selected Publications

  • The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films, Pengzhan Zhang, Kunji Chen, Zewen Lin, Hengping Dong, Wei Li, Jun Xu and Xinfan Huang, APPLIED PHYSICS LETTERS 106 231103 (2015)
  • a-SiNx:H-based ultra-low powerresistive random access memorywith tunable Si dangling bondconduction paths, Xiaofan Jiang, Zhongyuan Ma, Jun Xu, Kunji Chen, Ling Xu, Wei Li,Xinfan Huang,Duan Feng, Scientific Reports 5 15762(2015)
  • Boosting light emission from Si-based thin film over Si and SiO2 nanowires architecture, Zhongwei Yu, Shengyi Qian, Linwei Yu, SoumyadeepMisra, Pei Zhang, Junzhuan Wang, Yi Shi, Ling Xu, Jun Xu, Kunji Chen, and Pere Roca iCabarrocas, Optics Express 23 5388 (2015)
  • In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates, L. Yu, M. Xu, J. Xu, Z. Xue, Z. Fan, G. Picardi, F. Fortuna, J. Wang, J. Xu, Y. Shi, K. Chen, and P. Roca iCabarrocas, Nano Letters 14 6469 (2014)
  • Higher than 60% internal quantum efficiency of photoluminescence from amorphous silicon oxynitride thin films at wavelength of 470 nm, Pengzhan Zhang, Kunji Chen, Hengping Dong, Pei Zhang, Zhonghui Fang, Wei Li, Jun Xu, and Xinfan Huang, APPLIED PHYSICS LETTERS 105 011113 (2014)
  • Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model, Wang Y, Qian X, Chen K, Fang Z, Li W, Xu J, Applied Physics Letters 102 042103 (2013)