2002-2004 Assistant Professor, Department of Electrical and
Computer Engineering, UCSB
2004-2007 Associate Professor, Department of Electrical and
Computer Engineering, UCSB
2007- Professor, Department of Electrical and Computer
2016 Specially Appointed Professor, Institute of
Innovative Research, Tokyo Institute of Technology
2018- Specially Appointed Professor, School of
Engineering, Tokyo Institute of Technology
Field of Specialization
Electron Devices, Nanoelectronics
School of Engineering（Tokyo Tech）
University of California, Santa Barbara（U.S.A）
Research Hub Group：Materials and Devices international hub group
- The Last Barrier To Ultra-Miniaturized Electronics Is Broken, Thanks To A New Type Of Inductor (Forbes, Mar 8, 2018)
- CMOS-Compatible Graphene (Highlights from the 2018 IEDM – Nature Electronics, Nov 30, 2018)
- Engineers create atomically thin superlattice materials with precision (Phys.Org, Sept 26, 2017)
- Flat transistor defies the limit (Nature News & Views, Oct 1, 2015)
- Team develops ultra sensitive biosensor from molybdenite semiconductor (Phys.Org, Sept. 4, 2014)
IBM Faculty Award
Distinguished Lecturer Award, IEEE Electron Devices Society
Friedrich Wilhelm Bessel Research Award, Humboldt Foundation, Germany
Fellow, Institute of Electrical and Electronics Engineers (IEEE)
Fellow, Japan Society for the Promotion of Science (JSPS)
Fellow, American Physical Society (APS)
IEEE Kiyo Tomiyasu Technical Field Award
Fellow, American Association for the Advancement of Science (AAAS)
- J. Kang, Y. Matsumoto, X. Li, J. Jiang, X. Xie, K. Kawamoto, M. Kenmoku, J-H. Chu, W. Liu, J. Mao, K. Ueno and K. Banerjee,” On-Chip Intercalated-Graphene Inductors for Next-Generation Radio Frequency Electronics,” Nature Electronics, Vol. 1, No. 1, pp. 46-51, 2018.
- J. Jiang, J. Kang, W. Cao, X. Xie, H. Zhang, J. H. Chu, W. Liu, and K. Banerjee, “Intercalation Doped Multilayer-Graphene-Nanoribbons for Next-Generation Interconnects,” Nano Letters, Vol. 17, No. 3, pp. 1482-1488, 2017.
- A. Allain, J. Kang, K. Banerjee and A. Kis, “Electrical contacts to two-dimensional semiconductors,” Nature Materials, Vol. 14, pp. 1195–1205, (2015).
- W. Cao, J. Kang, D. Sarkar, W. Liu, and K. Banerjee, “2D semiconductor FETs – Projections and design for sub-10 nm VLSI,” IEEE Transactions on Electron Devices, 62 (11), 3459-3469, (2015).
- D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P.M. Ajayan and K. Banerjee, “A subthermionic tunnel field-effect transistor with an atomically thin channel,” Nature, 526, pp. 91-95, (2015).
- J. Kang, W. Liu, D. Sarkar, D. Jena and K. Banerjee, “Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors,” Phys. Review X, 4(3), 031005, (2014).
- J. Kang, W. Liu and K. Banerjee, “High-performance MoS2 transistors with low-resistance molybdenum contacts,” Applied Physics Letters, 104 (9), 093106, (2014).
- D. Sarkar, W. Liu, X. Xie, A. Anselmo, S. Mitragotri and K. Banerjee, “MoS2 field-effect transistor for next-generation label-free biosensors,” ACS Nano, 8 (4), 3992-4003, (2014).
- W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee, “Role of metal contacts in designing high-performance monolayer n-Type WSe2 field-effect-transistors,” Nano Letters, 13 (5), 1983-1990, (2013).