Toshio Kamiya

1991-2002 Assistant Professor, Tokyo Institute of Technology
2000-2002 Visiting Scholar, Cavendish Laboratory, University of Cambridge, UK
2002-2003 Lecturer, Tokyo Institute of Technology
2003-2010 Associate Professor, Tokyo Institute of Technology
2010-   Professor, , Tokyo Institute of Technology
2012-  Vice Director, Materials Research Center for Element Strategy, Tokyo Institute of Technology
2017-  Director, Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology

Field of Specialization
Materials Science / Device / Computational Materials Science

Laboratory for Materials and Structures(IIR, Tokyo Tech)

Research Hub Group:Materials and Devices Research International Hub Group

Research Highlights

  • Invention of amorphous oxide semiconductor thin-film transistor (2014.12)
  • First reports on first-principles calculations, atomic structures, defect structures of amorphous oxide semiconductors(2015~)
  • First realization of inorganic light-emitting thin films fabricated at room temperature (2016.1)


  • Mar. 2017
    The first conversion of amorphous Ga2Ox to semiconductor, published in NPG Asia Materials
  • Jan.2017
    Low-voltage driving of inverted organic light-emitting diodes by using novel amorphous oxide semiconductors, published in Proceedings of the National Academy of Sciences of the United States of America
  • Nov.2016
    Review on amorphous oxide semiconductors and their thin-films transistors, published in “Handbook of Visual Display Technology 2nd edition”

Selected Awards

  • Toshio Kamiya、Kenji Nomura, Hideo Hosono: Design of amorphous oxide semiconductors and room-temperature fabrication of high-performance TFT; The Advanced Technology Award by the Fuji-Sankei group (2005) [in Japanese].
  • Toshio Kamiya: Study on optoelectronic devices utilizing specific electronic structure of oxide semiconductors, The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology, The Young Scientists' Prize (2007) [in Japanese].
  • Kenji Nomura, Toshio Kamiya, Hideo Hosono: Invention of Oxide Semiconductor Thin-Film Transistor; Tejima Research Award (Invention) (2011) [in Japanese].
  • Toshio Kamiya, Kenji Nomura and Hideo Hosono: Present status of amorphous In-Ga-Zn-O thin-film transistors; Best Paper Prize, Science and Technology of Advanced Materials (2012).
  • Toshio Kamiya: Study on electronic and defect structures in amorphous and polycrystalline semiconductors, Japan Ceramics Society: Research Award (2013) [in Japanese].
  • Toshio Kamiya: For his outstanding contribution to the materials science of amorphous oxide semiconductors, SID Special Recognition Award (2015)
  • Hideo Hosono, Hiroshi Kawazoe and Toshio Kamiya: Study on creation and applications of inorganic electronic functional materials, Grand Prix, The Ceramic Society of Japan (2016)

Selected Publications 

  • Kim, J., Sekiya, T., Miyokawa, N., Watanabe, N., Kimoto, K., Ide, K., Toda, Y., Ueda, S., Ohashi, N., Hiramatsu, H., Hosono, H. & Kamiya, T.: Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor, NPG Asia Mater. 9 (2017) e359-1 – 7.
  • Kim, J., Miyokawa, N., Ide, K., Toda, Y., Hiramatsu, H., Hosono, H. & Kamiya, T.: “Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor, AIP Advances 6 (2016) 015106-1 ~ 8 (2016).
  • Ran F.-Y., Xiao Z., Toda Y., Hiramatsu H., Hosono H. & Kamiya T.: n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route, Sci. Rep. 5 (2015) 10428-1 ~ 8.
  • Hanyu, Y., Domen, K., Nomura, K., Hiramatsu, H., Kumomi, H., Hosono, H. & Kamiya, T.: Hydrogen Passivation of Electron Trap in Amorphous In-Ga-Zn-O Thin-Film Transistors, Appl. Phys. Lett. 103 (2013) 2012114-1 ~ 3.
  • Nomura, K., Kamiya, T. & Hosono, H.: Ambipolar Oxide Thin-Film Transistor; Adv. Mater. 23 (2011) 3431-3434.
  • Ide, K., Kikuchi, Y., Nomura, K., Kimura, M., Kamiya, T. & Hosono, H.: Effects of Excess Oxygen on Operation Characteristics of Amorphous In-Ga-Zn-O Thin-Film Transistors; Appl. Phys. Lett. 99 (2011) 093507-1 – 3.
  • Kamiya, T., Nomura, K. & Hosono H.: Present status of amorphous In-Ga-Zn-O thin-film transistor, Sci. Technol. Adv. Mater. 11, pp. 044305-1 ~ 23 (2010) 044305-1 ~ 23.
  • Hsieh, H.-H., Kamiya, T., Nomura, K., Hosono, H. & Wu, C.-C.: Mdeling of amorphous InGaZnO4 thin film transistors and their subgap density of states, Appl. Phys. Lett. 92 (2008) 133503-1 – 3.
  • Nomura, K., Kamiya, T., Ohta, H., Uruga, T., Hirano, M., & Hosono, H.: Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations, Phys. Rev. B 75 (2007) 035212-1 ~ 5.
  • Nomura, K., Ohta, H., Takag, A., Kamiya, T., Hirano, M., & Hosono, H.: Room-Temperature Fabrication of Transparent Flexible Thin Film Transistors Using Amorphous Oxide Semiconductors, Nature (London) 432 (2004) 488 ~ 492.
  • Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H.: Thin film transistor fabricated in single-crystalline transparent oxide semiconductor, Science 300 (2003) 1269-1272.