Ryoichi Ishihara

Profile
1996-2003 Postdoctoral, Delft University of Technology
2003-2007 Research Associate, Delft University of Technology
2007- Associate Professor, Delft University of Technology
2016- Associate Professor (Specially Appointed), Institute of Innovative Research, Tokyo Institute of Technology

Field of Specialization
Semiconductor devices

Laboratory for Future Interdisciplinary Research of Science and Technology(IIR, Tokyo Tech)
Delft University of Technology(Netherlands)

 http://homepage.tudelft.nl/37b8x/TUD/Top/Top.html
 r.ishihara@tudelft.nl

Research Hub Group:Materials and Devices international hub group

Research Highlight

  • Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the μ-Czochralski (grain filter) process(2007)
  • Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate (2010)

Awards

  • 2014
    Best Paper Award, ITC (International Thin-Film Transistor Conference)
  • 2009
    Best Poster Award, E-MRS 2009 Spring Meeting
  • 2005, 2007
    Best Paper Award, The International Workshop on Active-Matrix Flat-Panel Displays (AMFPD)
  • 2003 
    Outstanding poster award, IDW (International Display Workshop)

Selected Publications

  • M. Trifunovic, T. Shimoda and R. Ishihara, “Solution-processed polycrystalline silicon on paper”, Appl. Phys. Lett. 106, 163502 (2015)
  • Fiorentino, G., Vollebregt, S., Tichelaar, F.D., Ishihara, R., Sarro, P.M, “Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based super-capacitors performances”, (2015) Nanotechnology, 26 (6), art. no. 064002,
  • P. Sun, E. Charbon and R. Ishihara, “A Flexible Ultrathin-Body Single-Photon Avalanche Diode With Dual-Side Illumination”, Selected Topics in Quantum Electronics, IEEE Journal of , vol.20, no.6, pp.1,8, Nov.-Dec. 2014
  • S. Vollebregt, F.D. Tichelaar, H. Schellevis, C.I.M. Beenakker, R. Ishihara, ” Carbon nanotube vertical interconnects fabricated at temperatures as low as 350°C”, Carbon, 71, pp. 249-256 (2014)
  • Ryoichi Ishihara, Jin Zhang, Miki Trifunovic, Jaber Derakhshandeh, Negin Golshani, Daniel M. R. Tajari Mofrad, Tao Chen, Kees Beenakker, Tatsuya Shimoda: “Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics” IEICE Transactions 97-C(4): 227-237 (2014)
  • J. Zhang, M. Van Der Zwan, R. Ishihara, “Single-grain Si TFTs fabricated from sputtered si on a polyimide substrate”, IEEE/OSA Journal of Display Technology, 10 (11), (2014) art. no. 6762833, pp. 945-949