2004 – 2010 PhD Researcher, JST
2010 Assoc. Prof., Frontier Research Center, Tokyo Tech.
2011–2016 Assoc. Prof., Materials and Structures Laboratory, Tokyo Tech.
2016– Assoc. Prof., Institute of Innovative Research, Tokyo Tech.
Field of Specialization
Exploration of functional materials, Optical / electrical properties, Semiconductors, Superconductivity
Laboratory for Materials and Structures（IIR, Tokyo Tech）
Research Hub Group：Materials・devices research international hub group
- Discovery of a new nitride semiconductor using high-pressure synthesis by collaboration with materials informatics (Prof. Oba, TITech.)（June 2016）
- Observation of superconductivity in electric double-layer transistors using insulator-like FeSe with higher Tc than that of bulk（April 2016）
- June 2016
A paper on discovery of a new ternary nitride semiconductor was published in Nature Commun.,and related topic was introduced in 10 newspapers.
- April 2016
A paper on superconductivity in electric double-layer transistors using FeSe films was published in Proc. Natl. Acad. Sci. USA, and related topic was introduced in 3 newspapers.
- The 15th Young Scientist Award for the Presentation of an Excellent Paper, Japan Society of Applied Physics
- The 21st (2004) Inoue Research Award for Young Scientists (Inoue Foundation for Science) The 31st Paper Award, Japan Society of Applied Physics
- The 16th Award on Superconductivity Science and Technology
- Tokyo Tech. challenging research award 2012: The special award from President of TITech.
- The Young Scientists’ Prize, The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology
- Y. Hinuma, T. Hatakeyama, Y. Kumagai, L. A. Burton, H. Sato, Y. Muraba, S. Iimura, H. Hiramatsu, I. Tanaka, H. Hosono, and F. Oba “Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis” Nat. Commun., vol. 7, pp. 11962-1 – 11962-10 (2016).
- K. Hanzawa, H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono “Electric field-induced superconducting transition of insulating FeSe thin film at 35 K” Proc. Natl. Acad. Sci. USA, vol. 113, pp. 3986 – 3990 (2016).